QUANTUM YIELD OF GaAs SEMITRANSPARENT PHOTOCATHODE
- 15 July 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (2), 60-62
- https://doi.org/10.1063/1.1653309
Abstract
The quantum yield of a semiconductor thin‐film photocathode, operating in the transmission mode, has been derived from the continuity equation and light multiple reflections within the film and the substrate. The fit between experiment and theory is good for hv19 Zn‐doped 2.5‐μ ‐thick film and 0.1μ for the 3×1019 Zn‐doped 0.85‐μ ‐thick film, respectively.Keywords
This publication has 3 references indexed in Scilit:
- EFFECTS OF HEAT CLEANING ON THE PHOTOEMISSION PROPERTIES OF GaAs SURFACESApplied Physics Letters, 1969
- SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATESApplied Physics Letters, 1968
- Absorption Edge in Degenerate p-Type GaAsJournal of Applied Physics, 1962