Surface science aspects of etching reactions
- 1 January 1992
- journal article
- review article
- Published by Elsevier in Surface Science Reports
- Vol. 14 (4-6), 162-269
- https://doi.org/10.1016/0167-5729(92)90009-z
Abstract
No abstract availableKeywords
This publication has 224 references indexed in Scilit:
- Reactions of photogenerated free radicals at surfaces of electronic materialsChemical Reviews, 1989
- Anisotropic etching of SiO2 in low-frequency CF4/O2 and NF3/Ar plasmasJournal of Applied Physics, 1984
- Photoeffects on the fluorination of silicon. I. Influence of doping on steady-state phenomenaThe Journal of Chemical Physics, 1983
- An XPS and Auger investigation of CF+3 ion bombardment of siliconApplications of Surface Science, 1979
- Ion-surface interactions in plasma etchingJournal of Applied Physics, 1977
- Low energy ion scattering: Elastic and inelastic effectsNuclear Instruments and Methods, 1976
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975
- The activated, dissociative chemisorption of methane on tungstenThe Journal of Chemical Physics, 1975
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968
- Silicon-Fluorine Chemistry. I. Silicon Difluoride and the Perfluorosilanes1Journal of the American Chemical Society, 1965