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X-Ray Topographic Studies of Strains in Silicon Implanted with In Ions at High Doses
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X-Ray Topographic Studies of Strains in Silicon Implanted with In Ions at High Doses
X-Ray Topographic Studies of Strains in Silicon Implanted with In Ions at High Doses
NI
Nobuo Itoh
Nobuo Itoh
YM
Yasumitsu Morikawa
Yasumitsu Morikawa
TN
Tanehiro Nakau
Tanehiro Nakau
HK
Haruo Kuroda
Haruo Kuroda
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1 December 1975
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 14
(12)
,
2069-2070
https://doi.org/10.1143/jjap.14.2069
Abstract
No abstract available
Keywords
SILICON IMPLANTED
RAY TOPOGRAPHIC STUDIES
IONS AT HIGH
STUDIES OF STRAINS
STRAINS IN SILICON
Cited by 2 articles