An interdigitated metal-semiconductor-metal Schottky barrier photodetector monolithically integrated with a ridge waveguide and suitable for the 1.3–1.6 μm wavelength range is reported. The GaInAs detector on top of a GaInAsP (Λg= 1.2 μm) guide used a 35 nm layer of GaAs to enhance the Schottky barrier. Internal quantum efficiencies of around 80% and a pulse response of 147ps (FWHM) were obtained.