Critical behavior of the electrical resistance of very thin Cr films

Abstract

Measurements of the thickness dependence of the electrical resistance of two very thin Cr films deposited at substrate temperatures of 385 and 360 °C and pressures of ${10}^{\mathrm{-}7}$ and ${10}^{\mathrm{-}6}$ Torr are reported. The various conduction mechanisms have been identified and a metal-insulator region spanning about 5.5 nm of thickness has been found. In this region the resistance of both films follows the scaling law R∝(d-$d_c$ ${)}^{\mathrm{-}t}$ with t=1.34±0.11 and $d_c$ equal to 1.64±0.20 and 1.03±0.20 nm.