Space charge and injection capacitances of p-n junctions from small signal numerical solutions
- 14 December 1983
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 16 (12), L263-L267
- https://doi.org/10.1088/0022-3727/16/12/005
Abstract
The relative contribution of the space charge capacitance and injection capacitance to the total diode capacitance has been studied exactly by using a functional separation of the capacitance in the exact small signal numerical solution for both abrupt and diffused p-n junctions in the forward biased region.Keywords
This publication has 9 references indexed in Scilit:
- A mathematical study of space-charge layer capacitance for an abrupt p-n semiconductor junctionSolid-State Electronics, 1977
- The capacitance of abrupt p-n junction diodes under forward biasPhysica Status Solidi (a), 1973
- Influence of the Incomplete Ionization of Impurities on the Capacitance of p-n JunctionsJournal of Applied Physics, 1971
- Transition region capacitance of diffused p-n junctionsIEEE Transactions on Electron Devices, 1971
- Numerical solutions for a one-dimensional silicon n-p-n transistorIEEE Transactions on Electron Devices, 1970
- Inversion layers in abrupt p-n junctionsSolid-State Electronics, 1970
- The capacitance of p-n junctionsSolid-State Electronics, 1967
- Capacitance of p-n Junctions: Space-Charge CapacitanceJournal of Applied Physics, 1966
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964