The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich melts
- 1 December 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 70 (1-2), 365-372
- https://doi.org/10.1016/0022-0248(84)90288-4
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Experimental determination of the mercury-rich corner of the Hg-Cd-Te phase diagramJournal of Electronic Materials, 1984
- Energy gap versus alloy composition and temperature in Hg1−xCdxTeJournal of Applied Physics, 1982
- Electrical Properties of-Type GermaniumPhysical Review B, 1954