GaN Substrates—Progress, Status, and Prospects
- 7 April 2009
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 15 (4), 1041-1052
- https://doi.org/10.1109/jstqe.2009.2015057
Abstract
Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have attracted a renewed interest in development of nitride devices based on native substrates. The still low yet rapidly increasing availability of native GaN substrates opens the full potential of GaN devices and has accelerated progress in the development of several electronic and optoelectronic devices. In this paper, progress in the primary competing growth techniques for producing native GaN substrates will be reviewed. The technological issues pertaining to faster scalability of GaN substrate production will be discussed. The current state-of-the-art substrate material properties and the future prospects for the growth approaches and substrate quality will be presented.Keywords
This publication has 52 references indexed in Scilit:
- Optical characterization of bulk GaN substrates with c ‐, a ‐, and m ‐plane surfacesphysica status solidi (c), 2009
- High‐quality nonpolar m ‐plane GaN substrates grown by HVPEPhysica Status Solidi (a), 2008
- Surface preparation of substrates from bulk GaN crystalsJournal of Crystal Growth, 2007
- Nonpolar a‐ and m‐plane bulk GaN sliced from boules: structural and optical characteristicsphysica status solidi (c), 2007
- High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphireApplied Physics Letters, 2006
- Freestanding two inch c‐plane GaN layers grown on (100) γ‐lithium aluminium oxide by hydride vapour phase epitaxyphysica status solidi (c), 2006
- GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Qualityphysica status solidi (a), 2002
- Gallium nitride materials - progress, status, and potential roadblocksProceedings of the IEEE, 2002
- Two-step growth of high-quality GaN by hydride vapor-phase epitaxyApplied Physics Letters, 2000
- Large area GaN substratesMaterials Science and Engineering B, 1999