Transport properties of heavily doped N-type silicon
- 31 March 1966
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 4 (3), 111-114
- https://doi.org/10.1016/0038-1098(66)90205-5
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Theory of Impurity Band Conduction in SemiconductorsProgress of Theoretical Physics, 1961
- Electrical properties of impurity conducting n-type germaniumPhysica, 1961
- Anomalous Electrical Resistivity and Magnetoresistance Due to anInteraction in Cu-Mn AlloysPhysical Review B, 1957
- Theory of the Electrical Properties of Germanium and SiliconPublished by Elsevier ,1955
- Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy SurfacesPhysical Review B, 1954
- Theory of the Galvanomagnetic Effects in GermaniumPhysical Review B, 1954