Nanometer pattern fabrication using a novel X-ray mask with a cross-sectioned metal thin film absorber
- 1 March 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 13 (1-4), 315-318
- https://doi.org/10.1016/0167-9317(91)90101-i
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Absence of resolution degradation in X-ray lithography for λ from 4.5nm to 0.83nmMicroelectronic Engineering, 1990