Femtosecond dynamics of highly excited carriers in AlxGa1−xAs
- 20 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (3), 161-163
- https://doi.org/10.1063/1.98908
Abstract
Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1−xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.Keywords
This publication has 16 references indexed in Scilit:
- Femtosecond carrier dynamics in GaAsApplied Physics Letters, 1987
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Ultrafast relaxation dynamics of photoexcited carriers in GaAs and related compoundsJournal of the Optical Society of America B, 1985
- Femtosecond Orientational Relaxation of Photoexcited Carriers in GaAsPhysical Review Letters, 1984
- Femtosecond studies of intraband relaxation in GaAs, AlGaAs, and GaAs/AlGaAs multiple quantum well structuresApplied Physics Letters, 1984
- Picosecond degenerate four-wave mixing through orientation and concentration gratings in GaAsApplied Physics Letters, 1984
- Equal-pulse correlation technique for measuring femtosecond excited state relaxation timesApplied Physics Letters, 1983
- Femtosecond Relaxation of Photoexcited Nonequilibrium Carriers inPhysical Review Letters, 1983
- Dynamics of hot carrier cooling in photo-excited GaAsSolid State Communications, 1979
- Dynamics of Photoexcited GaAs Band-Edge Absorption with Subpicosecond ResolutionPhysical Review Letters, 1979