X-Ray Micrographic Study of Silicon Carbide Crystals

Abstract

The traverse X-ray diffraction micrography is applied to studies on silicon carbide single crystals of 6H structure. Two kinds of dislocations of new types, having the Burgers vector in a direction and in an average direction , are found. The second kind of dislocation is often found in distorted regions of the crystals and sometimes created by chopping or neutron irradiation. Impurity layers which are proved to exist seem to be a cause of the lattice distortion. The mechanism of crystal growth is discussed in relation to the second kind of dislocation.