GaAs p-n junctions with varying local delay time of the recombination emission and its dependence on doping
- 16 January 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 9 (1), K61-K63
- https://doi.org/10.1002/pssa.2210090162
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Degradation of GaAs injection devicesSolid-State Electronics, 1968
- Inkohärente und kohärente Rekombinationsstrahlung in HalbleiterdiodenFortschritte der Physik, 1965
- Elektronische HalbleiterPublished by Springer Nature ,1965