The Crystallization and Amorphization of Si from the Melt at Interface Velocities Approaching 20 m/sec
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
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- Control of melt-front velocity during pulsed laser annealingApplied Physics Letters, 1981
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- Effect of structure and impurities on the epitaxial regrowth of amorphous siliconApplied Physics Letters, 1980
- Segregation and increased dopant solubility in Pt-implanted and laser-annealed Si layersApplied Physics Letters, 1980
- SOLUTE TRAPPINGPublished by Elsevier ,1980
- RAPID SOLIDIFICATIONPublished by Elsevier ,1980
- Picosecond laser-induced melting and resolidification morphology on SiApplied Physics Letters, 1979
- Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser IrradiationPhysical Review Letters, 1979