Reactive ion etching induced corrosion of Al and Al-Cu films
- 1 April 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (4), 2994-2999
- https://doi.org/10.1063/1.329043
Abstract
Aluminum and Al-Cu conductor lines etched with a Cl containing plasma in low-pressure diode systems corroded rapidly upon atmospheric exposure. The mechanisms underlying this corrosion problem were investigated using Auger electron and x-ray photoelectron spectroscopies. Reactive ion etching resulted in a nonprotective oxide layer and thus rendered the etched samples more susceptible to atmospheric corrosion. Factors contributing to the increased reactivity of etched samples includes C and Cl contamination, radiation damage, and for Al-Cu alloys, Cu enrichment. A thermal oxidation treatment at temperatures of ∼300–350 °C and l atm O2 pressure for ≳30–45 min was found to be effective in restoring the protective oxide layer and thus improving the corrosion resistance of etched samples.Keywords
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