Rankings
Publications
Search Publications
Cited-By Search
Sources
Publishers
Scholars
Scholars
Top Cited Scholars
Organizations
About
Login
Register
Home
Publications
Collector-up HBT's fabricated by Be
+
and O
+
ion implantations
Home
Publications
Collector-up HBT's fabricated by Be
+
and O
+
ion implantations
Collector-up HBT's fabricated by Be
+
and O
+
ion implantations
SA
S. Adachi
S. Adachi
TI
T. Ishibashi
T. Ishibashi
Publisher Website
Google Scholar
Add to library
Cite
Download
Share
Download
1 January 1986
journal article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
in
IEEE Electron Device Letters
Vol. 7
(1)
,
32-34
https://doi.org/10.1109/edl.1986.26282
Abstract
No abstract available
Keywords
FABRICATION
MOLECULAR BEAM EPITAXY
PARASITIC CAPACITANCE
BIPOLAR TRANSISTOR
GALLIUM ARSENIDE
ION IMPLANTATION
ANNEALING
HETEROJUNCTION BIPOLAR TRANSISTOR
Cited by 20 articles