Arsenic Diffusion in Silicon Using Low As[sub 2]O[sub 3]-Content Binary Arsenosilicate Glass Sources

Abstract

Arsenic diffusion from a low‐ content arsenosilicate glass film into silicon has been measured in the range 1000°–1200°C. The activation energy is found to be in good agreement with previous work. Concentration dependence of the diffusion coefficient of arsenic in silicon has been evaluated from the diffusion profiles using the Boltzmann‐Matano analysis. In addition, the masking ability of toward arsenic diffusion and some diffusion parameters of arsenic in have been estimated.