Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrate by C-V and Q-V analysis
- 1 September 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (5), 279-281
- https://doi.org/10.1063/1.1655472
Abstract
The mobility distribution in a semiconducting epitaxial film on insulating substrate is derived from transmission line analysis of Q‐V data combined with the C‐V method for obtaining impurity distribution. The mobility thus obtained is found to agree with that obtained by Hall effect measurements for an n‐type epitaxial GaAs layer on semi‐insulating Cr‐doped GaAs substrate.Keywords
This publication has 9 references indexed in Scilit:
- Impurity Profile Determination in Epitaxial GaAs Crystals on High-Resistivity SubstratesJapanese Journal of Applied Physics, 1973
- Fast neutron tolerance of GaAs JFET's operating in the hot electron rangeIEEE Transactions on Electron Devices, 1972
- Predicted Effects of Neutron Irradiation on GaAs Junction Field Effect TransistorsIEEE Transactions on Nuclear Science, 1970
- Epitaxial GaAs p-n junction field-effect transistorsProceedings of the IEEE, 1968
- Grown-film silicon transistors on sapphireProceedings of the IEEE, 1964
- Radiation-Produced Energy Levels in Compound SemiconductorsJournal of Applied Physics, 1959
- Transport Properties in Silicon and Gallium ArsenideJournal of Applied Physics, 1959
- Effective Carrier Mobility in Surface-Space Charge LayersPhysical Review B, 1955
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942