The basic principles of multilayer epitaxial garnet films were discussed in an earlier paper.1 The most useful multilayer configuration consists of a relatively high moment outer garnet film epitaxially grown on a low moment inner film. At the operating bias field the inner layer fully saturates and bubbles are supported in the outer layer only. The interfacial domain walls thus produced provide an avenue whereby Bloch‐Néel transitions can unwind to convert hard bubbles into normal bubbles.2,3 Thus use of properly designed multilayer films provides the bubble circuit designer with one solution to the hard bubble problem.