Reflection electron-energy-loss investigation of the H-GaAs(110) surface
- 1 January 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (1), 8-15
- https://doi.org/10.1103/physrevb.29.8
Abstract
Reflection energy-loss spectra have been performed on GaAs(110):H system at several stages of coverages. The fully chemisorbed surface shows several H-induced losses. They have been interpreted on the basis of hydride electronic structure and of self-consistent pseudopotential calculations. The results indicate that chemisorption takes place on both Ga and As sites of the unrelaxed substrate through covalent directional bonds.Keywords
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