Dopant Redistribution during Thermal Oxidation of Monocrystalline Beta ‐ SiC Thin Films

Abstract

The redistribution of common electrical dopants during thermal oxidation thin films at 1473 K in dry was characterized by secondary ion mass spectrometry (SIMS). Experimental segregation coefficients and interfacial concentration ratios were determined for each dopant. Boron and aluminum depleted from the , with the boron depletion being much more pronounced. Nitrogen and phosphorus were found to pile up in the , with the former being much more pronounced. While the boron profile followed redistribution theory in the oxide, the aluminum and nitrogen profiles in the oxide were affected by the periodic distribution of the dopant in the , and by N contamination of the initial surface, respectively. The behavior of the phosphorus in the oxide is unclear due to the low concentration of the dopant.