Silicon and gallium arsenide field-effect transistors with Schottky-barrier gate
- 28 February 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (2), 111-116
- https://doi.org/10.1016/0038-1101(69)90119-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Conduction properties of the Au-n-type—Si Schottky barrierSolid-State Electronics, 1963
- The Field Effect TransistorBell System Technical Journal, 1955