High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps
- 1 January 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (24), 1483-1484
- https://doi.org/10.1049/el:19881012