High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs
- 31 October 2007
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 84 (9-10), 2105-2108
- https://doi.org/10.1016/j.mee.2007.04.124
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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