Advanced CMOS Technology Portfolio for RF IC Applications
- 27 June 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 52 (7), 1324-1334
- https://doi.org/10.1109/ted.2005.850631
Abstract
A high quality 90-nm CMOS-based technology portfolio suitable for various RF IC applications is presented. The portfolio is built up by a wide selection of active and passive components and a user-friendly process design kit (PDK). Layout-optimized RF components are studied in details including state-of-the-art 90 nm RFMOS devices with 120-160 GHz f/sub T/ and very low noise figures, varactors with tradeoff between quality factor and tuning ratio, precision capacitors with metal-insulator-metal and metal-over-metal schemes, and a variety of inductor structures suitable for different RF designs. The effectiveness for isolating substrate RF noise is also compared among several layout schemes. Finally the guidelines and requirements for constructing a useful PDK are addressed.Keywords
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