Anisotropic Ion Beam Assisted Etching of Optical Structures in GaAs and InP
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damageApplied Physics Letters, 1987
- Gallium arsenide and aluminum gallium arsenide reactive ion etching in boron trichloride/argon mixturesJournal of Vacuum Science & Technology B, 1987
- GaAs-AlAs monolithic microresonator arraysApplied Physics Letters, 1987
- Large area ion beam assisted etching of GaAs with high etch rates and controlled anisotropyJournal of Vacuum Science & Technology B, 1983
- Directional reactive-ion-etching of InP with Cl2 containing gasesJournal of Vacuum Science and Technology, 1981