Recombination Radiation in GaAs
- 1 January 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (1), 178-180
- https://doi.org/10.1063/1.1729062
Abstract
Recombination radiation in GaAs diodes has been found proportional to the forward diode current at current levels where the recombination radiation is dominant, implying an efficient conversion from injected electrons to band‐edge photons. A visible red radiation has been observed from these diodes at high forward diode currents.Keywords
This publication has 3 references indexed in Scilit:
- Band Structure and Electron Transport of GaAsPhysical Review B, 1960
- Auger effect in semiconductorsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Spontaneous Radiative Recombination in SemiconductorsPhysical Review B, 1957