Au–Si–Be Liquid Metal Ion Source for Maskless Ion Implantation

Abstract

A new alloyed-liquid-metal ion source for ion implantation into III-V compound semiconductors has been developed. A ternary alloy consisting of Au, Si & Be is used as the liquid metal for this ion source which is capable of emitting p-type dopant (Be), n-type dopant (Si), and Au ions from a single emitter tip. Threshold voltage for emitting ion current is about 6 kV and Be⁺⁺, Si⁺⁺ and Au⁺ ions are dominant. Energy spreads of Be and Si ion beams are less than 10 eV, while that of Au was greater than 15 eV.