Slow Surface Reaction on Germanium
- 1 June 1956
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (5), 1297-1301
- https://doi.org/10.1103/physrev.102.1297
Abstract
An experimental study of the long decay time levels has shown that the reaction between the levels and the bulk germanium depends on the number of carriers in the germanium, on the oxygen pressure, and exponentially on the temperature. It is therefore suggested that the rate-limiting process is electron transfer over a surface barrier. A simplified model, based on this mechanism, yields adequate agreement with the present results and also with those obtained by Kingston.Keywords
This publication has 7 references indexed in Scilit:
- Generation ofNoise by Levels in a Linear or Planar ArrayPhysical Review B, 1955
- Water-Vapor-Induced-Type Surface Conductivity on-Type GermaniumPhysical Review B, 1955
- Structure of Surface States at the Germanium-Germanium Oxide InterfacePhysical Review B, 1955
- Modulation of the Surface Conductance of Germanium and Silicon by External Electric FieldsProceedings of the Physical Society. Section B, 1955
- Surface barriers and surface conductancePhysica, 1954
- Kinetics of Active Centers in Surface-catalyzed ReactionsJournal of the American Chemical Society, 1953
- Modulation of Conductance of Thin Films of Semi-Conductors by Surface ChargesPhysical Review B, 1948