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Temperature dependence of latchup in CMOS circuits
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Temperature dependence of latchup in CMOS circuits
Temperature dependence of latchup in CMOS circuits
JD
J.G. Dooley
J.G. Dooley
RJ
R.C. Jaeger
R.C. Jaeger
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1 February 1984
journal article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
in
IEEE Electron Device Letters
Vol. 5
(2)
,
41-43
https://doi.org/10.1109/edl.1984.25825
Abstract
Measurements of the temperature dependence of holding current in bulk CMOS devices indicate that a substantial improvement in latchup resistance may be achieved by liquid-nitrogen temperature operation of CMOS technology.
Keywords
TEMPERATURE DEPENDENCE
CIRCUITS
CURRENT MEASUREMENT
SEMICONDUCTOR DEVICE MEASUREMENT
LOGIC GATES
TESTING
TEMPERATURE DISTRIBUTION
CMOS TECHNOLOGY
MOS DEVICES
STRESS
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Cited by 23 articles