Determination of the mobility gap in amorphous silicon from a low temperature photoconductivity measurement
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 299-302
- https://doi.org/10.1016/0022-3093(85)90660-x
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline siliconPhysical Review B, 1985
- Photoconductivity and photoluminescence of a-Si:H at low temperatureJournal of Non-Crystalline Solids, 1984
- Temperature dependent field effect conductance in a-Si:HJournal of Non-Crystalline Solids, 1983
- Effect of boron doping and its profile on characteristics of p-i-n a-Si:H solar cellsSolar Energy Materials, 1983
- Photogeneration and geminate recombination in amorphous siliconPhilosophical Magazine Part B, 1983