High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor

1 January 1976

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 12 (16), 395-396
https://doi.org/10.1049/el:19760303

Abstract

A Ga1-xAlxAs-GaAs heterostructure phototransistor has been manufactured and tested. The device is an n-p-n structure employing the ‘wide-gap-emitter’ effect. High internal current gain (>2000) has been achieved.

Keywords

HIGH INTERNAL CURRENT GAIN
WIDE GAP EMITTER TRANSISTORS
HETEROJUNCTION TRANSISTORS
HETEROSTRUCTURE PHOTOTRANSISTOR
NPN STRUCTURE
HIGH GAIN TRANSISTORS
GA1-XALXAS-GAAS PHOTOTRANSISTOR
>2000 GAIN

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