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High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor
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High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor
High-gain wide-gap-emitter Ga1-xAlxAs-GaAs phototransistor
HB
H. Beneking
H. Beneking
HM
H. Mischel
H. Mischel
GS
G. Schul
G. Schul
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1 January 1976
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 12
(16)
,
395-396
https://doi.org/10.1049/el:19760303
Abstract
A Ga1-xAlxAs-GaAs heterostructure phototransistor has been manufactured and tested. The device is an n-p-n structure employing the ‘wide-gap-emitter’ effect. High internal current gain (>2000) has been achieved.
Keywords
HIGH INTERNAL CURRENT GAIN
WIDE GAP EMITTER TRANSISTORS
HETEROJUNCTION TRANSISTORS
HETEROSTRUCTURE PHOTOTRANSISTOR
NPN STRUCTURE
HIGH GAIN TRANSISTORS
GA1-XALXAS-GAAS PHOTOTRANSISTOR
>2000 GAIN
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Cited by 16 articles