MBE growth and properties of GaN on GaN/SiC substrates
- 28 February 1997
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 41 (2), 213-218
- https://doi.org/10.1016/s0038-1101(96)00169-4
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shiftsJournal of Electronic Materials, 1992
- Absorption, Reflectance, and Luminescence of GaN Epitaxial LayersPhysical Review B, 1971
- The crystal structure of LiGaO2Acta Crystallographica, 1965