High-performance millimetre-wave GaAs power MESFET prepared by gas source molecular beam epitaxy

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Abstract
A state-of-the-art GaAs power MESFET prepared by gas source molecular beam epitaxy is described. The device showed DC transconductance of 180mS/mm and generated power density of 0–6W/mm at 35 GHz, with 5dB gain and 28% power-added efficiency.