Heat transfer in silicon Czochralski crystal growth
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 64 (3), 448-460
- https://doi.org/10.1016/0022-0248(83)90328-7
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Czochralski silicon pull rate limitsJournal of Crystal Growth, 1981
- Digital simulation of Czochralski bulk flow in a parameter range appropriate for liquid semiconductorsJournal of Crystal Growth, 1977
- Computational analysis of the flow in a crucibleJournal of Crystal Growth, 1975
- Influence of crystal dimensions on the interfacial temperature gradientJournal of Crystal Growth, 1972
- The Numerical Analyses of the Solid-Liquid Interface Shape during Crystal Growth by the Czochralski Method. Part II. Effects of the Crucible RotationJapanese Journal of Applied Physics, 1970
- The Numerical Analyses of the Solid-Liquid Interface Shapes during the Crystal Growth by the Czochralski MethodJapanese Journal of Applied Physics, 1970
- Analysis of the temperature distribution in pulled crystalsJournal of Crystal Growth, 1968
- Nonmixing Cells due to Crucible Rotation during Czochralski Crystal GrowthJournal of Applied Physics, 1968
- Macroscopic Interface Shape During SolidificationJournal of Heat Transfer, 1966
- Growth of monocrystals of germanium from an undercooled meltProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1955