Dependence of the Properties of Epitaxial Gallium Arsenide on the Temperature of AsCl3
- 1 December 1972
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 11 (12)
- https://doi.org/10.1143/jjap.11.1775
Abstract
The following varieties of electrical properties were obtained on the GaAs crystals grown epitaxially by using an open flow system of AsCl3-Ga-H2: (i) The carrier-concentration in the layers grown on Cr-doped semi-insulating substrates was varied from 2.5×1014 cm-3 to 2×1015 cm-3, while the temperature of AsCl3 varied from 20°C to 0°C, (ii) A high-resistance region at the epitaxial layer-(Sn-doped low-resistivity) substrate interface was observed when the temperature of AsCl3 was lowered prior to the epitaxial deposition, whereas a low-resistance region appeared while decreasing the temperature of AsCl3 during growth. Pyramid formation appeared on the epitaxial surface grown under higher temperature of AsCl3. It was eliminated by using a substrate cut five degrees off the (100) plane.Keywords
This publication has 7 references indexed in Scilit:
- AsCl3 Flow-Rate Dependence on Properties of Epitaxially Grown Gallium ArsenideJapanese Journal of Applied Physics, 1971
- Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate InterfaceJapanese Journal of Applied Physics, 1971
- Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 systemJournal of Crystal Growth, 1971
- Ionized Impurity Density in n-Type GaAsJournal of Applied Physics, 1970
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- Preparation and Properties of Epitaxial Gallium ArsenideJournal of the Electrochemical Society, 1969
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate InterfaceJapanese Journal of Applied Physics, 1968