Interfacial-band discontinuities for strained layers of InxGa1−xAs grown on (100) GaAs

Abstract

A study of excitonic transitions in pseudomorphic single quantum wells of InxGa1−xAs grown on a GaAs substrate is presented. The experimental data are obtained by the in-plane photocurrent spectroscopy technique. The interpretation, which is based on the deformation potential and elastic theories, includes valence-band mixing with no adjustable parameters. The present experimental results, and those compiled from recently published data, are well interpreted from a unique set of measured parameters. From calculations and experiments it emerges that the light holes confine in the strained ternary for all In fractions below 0.83.