Atomic level epitaxy of 3C-SiC by low pressure vapour deposition with alternating gas supply
- 1 March 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 225 (1-2), 230-234
- https://doi.org/10.1016/0040-6090(93)90160-q
Abstract
No abstract availableKeywords
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