A special-layered Schottky solar cell has been constructed which produces 9.5-percent sunlight efficiency over a 1-cm2area. This solar cell has a fill factor of 0.60 compared to 0.58 for a commercial p-n silicon cell. Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 0.67 to 0.42 for a Schottky cell. The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor.