Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)2)5 and O2 on bare and SiOxNy-passivated Si(100) for gate dielectric applications
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 16 (3), 1670-1675
- https://doi.org/10.1116/1.581140
Abstract
No abstract availableThis publication has 38 references indexed in Scilit:
- Conduction properties of amorphous Ta2O5 films prepared by plasma enhanced chemical vapour depositionSensors and Actuators A: Physical, 1995
- Low pressure chemical vapour deposition of tantalum pentoxide thin layersJournal of Non-Crystalline Solids, 1995
- Deposition, annealing and characterisation of high‐dielectric‐constant metal oxide filmsAdvanced Materials for Optics and Electronics, 1995
- Electrical properties of thin high- dielectric Ta2O5 filmsMicroelectronics Journal, 1994
- Ellipsometric Examination of Structure and Growth Rate of Metallorganic Chemical Vapor Deposited Ta2 O 5 Films on Si(100)Journal of the Electrochemical Society, 1994
- Low‐Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursorAdvanced Materials for Optics and Electronics, 1992
- Preparation of (111)-Oriented β-Ta2O5 Thin Films by Chemical Vapor Deposition Using Metalorganic PrecursorsJapanese Journal of Applied Physics, 1992
- Deposition, Annealing, and Characterization of Tantalum Pentoxide FilmsMRS Proceedings, 1992
- UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMsIEEE Transactions on Electron Devices, 1991
- Conduction Mechanism of Leakage Current in Ta2 O 5 Films on Si Prepared by LPCVDJournal of the Electrochemical Society, 1990