Photoemission and the Density of States in Indium
- 27 November 1967
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 19 (22), 1284-1286
- https://doi.org/10.1103/physrevlett.19.1284
Abstract
Photoemission measurements of the optical density of states in In are found to be in good over-all agreement with the density of states deduced from the nearly-free-electron model by use of a pseudopotential consistent with Fermi-surface data. A slight scaling of the energy, in accord with effective-mass data, is required.Keywords
This publication has 7 references indexed in Scilit:
- Fermi surface of In under hydrostatic pressureSolid State Communications, 1967
- Possible Non-One-Electron Effects in the Fundamental Optical Excitation Spectra of Certain Crystalline Solids and Their Effect on PhotoemissionPhysical Review B, 1967
- Experimental Determination of the Density of States in NickelPhysical Review B, 1966
- Photoemission Studies of Copper and Silver: TheoryPhysical Review B, 1964
- De Haas-Van Alphen effect in indiumPhysics Letters, 1964
- Low-Field de Haas-van Alphen Effect in IndiumPhysical Review B, 1963
- The phase boundaries in binary alloys, part 2: the theory of the , phase boundariesProceedings of the Physical Society, 1937