Raman study of the optical phonons in AlxGa1−xN alloys
- 31 October 1997
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 104 (1), 35-39
- https://doi.org/10.1016/s0038-1098(97)00162-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H–SiC and sapphire substratesApplied Physics Letters, 1996
- Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1996
- Anion-Related Differences in Phonons of (GaX)N(Ga1-xAlxX)N(001) Superlattices (X=As,N)Journal of Raman Spectroscopy, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1993
- Raman scattering in AlxGa1−xN alloysSolid State Communications, 1991
- Edge emission of AlxGa1−xNSolid State Communications, 1986
- Properties of AlxGa1−xN films prepared by reactive molecular beam epitaxyJournal of Applied Physics, 1982
- Optical studies of the vibrational properties of disordered solidsReviews of Modern Physics, 1975