A majority-carrier camel diode
- 1 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (1), 63-65
- https://doi.org/10.1063/1.90931
Abstract
A majority‐carrier diode concept is described in which current flow is controlled by a potential hump in the bulk of a semiconductor. Devices of this type, called camel diodes, having ideality factors <2 have been realized using low‐energy ion implantation.Keywords
This publication has 2 references indexed in Scilit:
- Control of Schottky barrier height using highly doped surface layersSolid-State Electronics, 1976
- Increasing the effective height of a Schottky barrier using low-energy ion implantationApplied Physics Letters, 1974