New model of the temperature dependence of the 1.4-eV emission band of amorphous silicon
- 15 June 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 25 (12), 7860-7862
- https://doi.org/10.1103/physrevb.25.7860
Abstract
Time-resolved measurements of the quenching of the long decay components of the 1.4-eV luminescence of -Si:H show that the mechanisms of thermally induced lifetime redistribution and thermal quenching are distinct. We identify the mechanisms as, respectively, electron and hole diffusion. This model implies distant-pair kinetics for the photoluminescence. Comparison of the activation energies found from the photoluminescence with those of the mobility suggest that the mobility is due, not to thermal excitation to a mobility edge, but to percolation in potential fluctuations of a length of some 100 Å.
Keywords
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