Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts
- 16 December 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (25), 253116
- https://doi.org/10.1063/1.2149991
Abstract
We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting.
Keywords
This publication has 16 references indexed in Scilit:
- Carbon Nanotube Schottky Diodes Using Ti−Schottky and Pt−Ohmic Contacts for High Frequency ApplicationsNano Letters, 2005
- p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube NetworksNano Letters, 2004
- Carbon nanotube p-n junction diodesApplied Physics Letters, 2004
- Ballistic carbon nanotube field-effect transistorsNature, 2003
- Transport through the interface between a semiconducting carbon nanotube and a metal electrodePhysical Review B, 2002
- Controlled creation of a carbon nanotube diode by a scanned gateApplied Physics Letters, 2001
- Role of Fermi-Level Pinning in Nanotube Schottky DiodesPhysical Review Letters, 2000
- Subband Population in a Single-Wall Carbon Nanotube DiodePhysical Review Letters, 1999
- Electronic and transport properties of N-P doped nanotubesApplied Physics Letters, 1999
- Single- and multi-wall carbon nanotube field-effect transistorsApplied Physics Letters, 1998