A unified explanation for secondary ion yields

Abstract

The pure element secondary ion yields under oxygen and cesium ion bombardment are shown to be solely dependent on a) the ionization potential (or electron affinity for negative ionization) of the sputtered atom and b) the reciprocal of the matrix sputtering yield which determines the equilibrium concentration of implanted oxygen or cesium. This unified approach accounts for the yields of C^±, Si^±, Ge^± and Sn^± from the pure elements as well as of Ga^± and As^± from gallium arsenide.