Unbacked Thin Films

Abstract

Thin self‐supporting films of SiO have been prepared by evaporation onto Zapon film backings which were afterwards removed by ion bombardment or solvents. The films are approximately 100 atoms thick (8 μg/cm²) and will withstand a 3‐mm Hg gas pressure differential over a disk of 8‐mm diameter, while passing several microamperes of deuterons in the energy range 30–100 kev. The root mean square scattering angle in the film at 30 kev is 6°.