Strain-Biased PLZT Input Devices (Page Composers) for Holographic Memories and Optical Data Processing
- 1 February 1972
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 11 (2), 397-404
- https://doi.org/10.1364/ao.11.000397
Abstract
PLZT-7/65/35 is a ferroelectric ceramic with strong electrooptic properties and memory; it is switched through transparent electrodes when mechanically strained. Matrix addressed x-y page composers for interfacing electrical and coherent optical systems are being fabricated with PLZT. Switching voltages are 50–300 V. Optical efficiencies greater than 40% have been achieved. Strains near 2.4 × 10−3 mm/mm permit half-wave retardation switching in 100-μ-thick plates with 80-V read-in and 190-V erase levels (60 Hz hysteresis data). A 128 × 128 element array can operate at 107 bits/sec with 10-μsec switching in a row at a time mode. Half-select disturbances affect contrasts. Applications in displays are also feasible.Keywords
This publication has 16 references indexed in Scilit:
- Application of Phase Modulation to Digital Data Recording By Means of Superposed Diffraction GratingsApplied Optics, 1971
- Strain-biased ferroelectric-photoconductor image storage and display devicesProceedings of the IEEE, 1971
- Hot‐Pressed (Pb,La)(Zr,Ti)O3 Ferroelectric Ceramics for Electrooptic ApplicationsJournal of the American Ceramic Society, 1971
- Write–Read–Erase in Situ Optical Memory Using Thermoplastic HologramsApplied Optics, 1970
- REAL-TIME HOLOGRAPHIC RECONSTRUCTION BY ELECTRO-OPTIC MODULATIONApplied Physics Letters, 1970
- Image Storage and Display Devices Using Fine-Grain, Ferroelectric CeramicsBell System Technical Journal, 1970
- A Coherent Optical Computer System Using the Membrane Light ModulatorIEEE Transactions on Aerospace and Electronic Systems, 1970
- Ferroelectric ceramic light gates operated in a voltage-controlled modeIEEE Transactions on Electron Devices, 1970
- PhotochromicsPhysics Today, 1970
- Feasibility of electrooptic devices utilizing ferroelectric bismuth titanateProceedings of the IEEE, 1970