Tetrahedrally bonded amorphous carbon (ta-C) thin film transistors
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (5), 498-499
- https://doi.org/10.1049/el:19960288
Abstract
The authors describe a glass compatible, carbon-based, metal-insulator- semiconductor field effect transistor (MISFET). Tetrahedral amorphous carbon (ta-C) is used, for the first time, as the active semiconductor layer in a coplanar thin film transistor (TFT) structure.Keywords
This publication has 5 references indexed in Scilit:
- C60 thin film transistorsApplied Physics Letters, 1995
- Field-effect transistors based on poly(p-phenylene vinylene) doped by ion implantationJournal of Applied Physics, 1995
- High-temperature thin-film diamond field-effect transistor fabricated using a selective growth methodIEEE Electron Device Letters, 1991
- Field-Effect Transistors using Boron-Doped Diamond Epitaxial FilmsJapanese Journal of Applied Physics, 1989
- The physics of amorphous-silicon thin-film transistorsIEEE Transactions on Electron Devices, 1989