Epitaxial deposition of infrared active devices on an insulating substrate

Abstract

The deposition of PbTe p‐n junctions on BaF₂ substrates using the hot wall technique of epitaxial growth is described. Our preliminary results indicate that this method of growth could serve as a very simple alternative to more elaborate methods for the fabrication of semiconductor devices and could help in the realization of infrared integrated optical circuits and imaging devices based on IV`VI materials deposited on insulating substrates.